Origin of room-temperature ferromagnetism in Mn doped semiconducting CdGeP2

CdGeP2 chalcopyrites doped with Mn have been recently found to exhibit room temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d^5) case. However, chalcopyrite semiconductors exhibit low-energy intrinsic defects. We show theoretically how ferromagnetism results from the interaction of Mn with hole-producing intrinsic defects.Comment: 4 pages, 4 figures. (To appear in Phys. Rev. Lett.

Bulk and nano GaN: Role of Ga d states

We have studied the role of Ga 3d states in determining the properties of bulk as well as nanoparticles of GaN using PAW potentials. A significant contribution of the Ga d states in the valence band is found to arise from the interaction of Ga 4d states with the dominantly N p states making up the valence band. The errors arising from not treating the Ga 3d states as a part of the valence are found to be similar, ~ 1%, for bulk as well as for nanoclusters of GaN.Comment: 17 pages, 7 figure

Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, we found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.Comment: 4 figures; To appear in Appl. Phys. Let

Elastic Properties of Carbon nanotubes : An atomistic approach

Energetically the single sheet of graphite (graphene) is more stable than the nanotube. The energy difference between the two systems can be directly related to the strain energy involved in rolling up the graphene sheet to form the nanotube. We have carried out first principle electronic structure calculations and evaluated the strain energy as a function of the nanotube radius. The dependence of the strain energy on the diameter of the nanotube has been found by several groups to be welldescribed by a continuum elasticity model. We attempt to examine why this is the case and show where atomistics enter the description.Comment: 10 pages, 4 figure

First-principles investigation of the assumptions underlying Model-Hamiltonian approaches to ferromagnetism of 3d impurities in III-V semiconductors

We use first-principle calculations for transition metal impurities V, Cr, Mn, Fe, Co and Ni in GaAs as well as Cr and Mn in GaN, GaP and GaSb to identify the basic features of the electronic structure of these systems. The microscopic details of the hole state such as the symmetry and the orbital character, as well as the nature of the coupling between the hole and the transition metal impurity are determined. This could help in the construction of model Hamiltonians to obtain a description of various properties beyond what current first-principle methods are capable of.Comment: 14 figure

Trends in Ferromagnetism in Mn doped dilute III-V alloys from a density functional perspective

Mn doping in dilute III-V alloys has been examined as a route to enhance ferromagnetic stability. Strong valence band bowing is expected at the dilute limit, implying a strong modification of the ferromagnetic stability upon alloying, with even an increase in some cases. Using first principle electronic structure calculations we show that while codoping with a group V anion enhances the ferromagnetic stability in some cases when the effects of relaxation of the lattice are not considered, strong impurity scattering in the relaxed structure result in a reduction of the ferromagnetic stability.Comment: 12 pages, 3 figures, Accepted in Physical Review

Strain induced metal-insulator transition in ultrathin films of SrRuO3_3

The ultrathin film limit has been shown to be a rich playground for unusual low dimensional physics. Taking the example of SrRuO$_3$ which is ferromagnetic and metallic at the bulk limit, one finds that it becomes antiferromagnetic and insulating at the three monolayers limit when grown on SrTiO$_3$. The origin of the insulating state is traced to strongly orbital dependent exchange splittings. A modest compressive strain of 1% of the SrTiO$_3$ substrate is then found to drive the system into a highly confined two-dimensional 100% spin polarized metallic state. This metal-insulator transition driven by a modest strain could be useful in two state device applications.Comment: Accept in Phys. Rev.

Spin, charge and orbital ordering in La0.5Sr1.5MnO4

We have analyzed the experimental evidence of charge and orbital ordering in La0.5Sr1.5MnO4 using first principles band structure calculations. Our results suggest the presence of two types of Mn sites in the system. One of the Mn sites behaves like an Mn(3+) ion, favoring a Jahn-Teller distortion of the surrounding oxygen atoms, while the distortion around the other is not a simple breathing mode kind. Band structure effects are found to dominate the experimental spectrum for orbital and charge ordering, providing an alternate explanation for the experimentally observed results.Comment: 4 pages + 3 figures; To appear in Phys. Rev. Let

Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

While isovalent doping of GaAs (e.g. by In) leads to a repulsion between the solute atoms, two Cr, Mn, or Fe atoms in GaAs are found to have lower energy than the well-separated pair, and hence attract each other. The strong bonding interaction between levels with t2 symmetry on the transition metal (TM) atoms results in these atoms exhibiting a strong tendency to cluster. Using first-principles calculations, we show that this attraction is maximal for Cr, Mn and Fe while it is minimal for V. The difference is attributed to the symmetry of the highest occupied levels. While the intention is to find possible choices of spintronic materials that show a reduced tendency to cluster, one finds that the conditions that minimize clustering tendencies also minimize the stabilization of the magnetic state.Comment: To appear in Appl. Phys. Let